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April 1995
BS270
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 500mA DC. These products are
particularly suited for low voltage, low current applications such
Features
400mA, 60V. R DS(ON) = 2 ? @ V GS = 10V.
High density cell design for low R DS(ON) .
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
as small servo motor control, power MOSFET gate drivers,
and other switching applications.
_____________ ___________________________________________________________________
D
G
S
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V DGR
V GSS
I D
P D
T J ,T STG
T L
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R GS < 1M ? )
Gate-Source Voltage - Continuous
- Non Repetitive (tp < 50μs)
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
Derate Above 25 ° C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
BS270
60
60
± 20
± 40
400
2000
625
5
-55 to 150
300
Units
V
V
V
mA
mW
mW/°C
°C
°C
Purposes, 1/16" from Case for 10 Seconds
THERMAL CHARACTERISTICS
R θ JA
Thermal Resistacne, Junction-to-Ambient
200
°C/W
? 1997 Fairchild Semiconductor Corporation
BS270.SAM
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